| Plasma etch | Metal etch | Cl2, BCl3, HCl, CF4, SF6 |
|---|---|---|
| Poly Silicon Etch | Cl2, HBr, Br2, SF6, CF4, BF3, C4F8 | |
| Nitride etch, Oxide Etch | CF4, CHF3, C2F6, C3F8, C4F8, CH2F2, NF3, O2 | |
| Ion implantation | High, Medium, Low | AsH3, PH3, BF3, P, As, Sb, Sb(CH3)3, GeH4, GeF4 |
| ALD, LPCVD PECVD, HDP-CVD | High-K dielectrics | TMA, TEMAZr, TEMAHf, TDEAHf, TAETO, PET |
| Low-K dielectrics | 1MS, 2MS, 3MS, 4MS, DMDMOS | |
| Gate Electrodes | MPA, Ru(Etcp)2, PEMAT | |
| Silicon Germanium | SiH4, GeH4 | |
| Tungsten silicate | WF6, SiH4, H2, DCS | |
| Barrier Layers | TiCl4, NH3, TDMAT, PDMATa, PDEATa, TAETO, W(CO)6 | |
| Poly Si (doped) | SiH4, AsH3, PH3 | |
| Nitride (doped) | SiH4, NH3, (TMP, TMB, SiH4, PH3, B2H6) | |
| Oxide | SiH4, O2 | |
| Chamber cleaning | PFC or Remote NF3 plasma | C2F6, C4F8, NF3 |
| Photovoltaics | Concentrator Photovoltaics | PH3, AsH3, Metalorganics, SiH4, GeH4 |
| CIGS | H2S, H2Se | |
| Epitaxy | Silicon (doped) | DCS, TCS, SiH4, (AsH3, PH3, B2H6) |
| Silicon-Germanium | SiH4, GeH4, CBr4, 1MS, 2MS, 3MS, HCl | |
| Silicon Carbide (SiC) | SiH4, CH4, C3H8, TMA, HCl | |
| Compound semiconductor, Optoelectronics, III-V on Si |
GaAs MOCVD | TMGa, AsH3, TBA, TMIn, PH3, TBP |
| GaN MOCVD | TMGa, NH3, UDMH | |
| III-V etch | Cl2, BCl3, HBr, SiF4, SF6, CH4, GaCl3, InCl3, AsH3, O2 |
>Group III
Liquid phase precursors
-
TMA
(Trimethylaluminum) -
TEGa
(Triethylgallium)
-
TMIn
(Trimethylindium)
>Group V
Gas phase precursors
- Ammonia (NH3)
- Phosphine (PH3)
- Arsine (AsH3)
- Stibine (SbH3)
Liquid phase precursors
-
UDMH
(Unsymmetrical dimethylhydrazine) -
TBP
(Tertiarybutylphosphine)
-
TBA
(Teriarybutylarsine)